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Brand Name : Infineon
Model Number : BSC030N08NS5ATMA1
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80 V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 3mOhm @ 50A, 10V
BSC030N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 80V Package 8-PowerTDFN
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 95µA | |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 40 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | PG-TDSON-8-7 | |
| Package / Case |
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21

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BSC030N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 80V Package 8-PowerTDFN Images |